Single mode laser with a V‐shaped active layer grown by metalorganic chemical vapor deposition: A v‐shaped double heterostructure laser

摘要

A single‐mode AlxGa1−xAs/GaAs laser of excellent performance was made by metalorganic chemical vapor deposition. The laser has a double heterostructure with a small V‐shaped active region of a self‐aligned junction stripe geometrically grown on a groove‐etched substrate. The self‐aligning process was based on a newly found anomalous zinc diffusion phenomenon. The minimum threshold current and the maximum differential quantum efficiency in continuous operation were 15 mA and 65 for a 250‐mgr;m‐long device. The output power up to 40 mW was attained with an Si3N4coated device. The beam shape from the laser was nearly circular with an aspect ratio less than 1.5.