Electrichyphen;field dependence of the photocarrier hopping mobility in bismuth silicon oxide

摘要

The photocarrier mobility of bismuth silicon oxide was measured through a timehyphen;ofhyphen;flight technique. To determine the photocarrier transit time, a method of data analysis was applied that has been developed for transit time dispersion in amorphous solids. The universality of current shape typical of lowhyphen;mobility amorphous solids was observed and an electrichyphen;field dependence of the photocarrier mobility in bismuth silicon oxide is now reported. In accordance with hopping conduction among localized bandhyphen;gap sites, the photocarrier mobility in bismuth silicon oxide decreases with increasing electric field.