Determination of crystallographic orientations in silicon films by Ramanhyphen;microprobe polarization measurements

摘要

Local crystallographic orientations of semiconductors have been determined by a scanning Raman microprobe combined with polarization measurements. We present a method of Raman scattering determination of crystallographic orientations in silicon crystals which allows rapid determination with an accuracy of plusmn;2deg;. It is found that surface morphology affects the Raman polarization analysis. For laserhyphen;annealed silicon layers capped with silicon nitride films, unpolarized scattered light is superimposed on polarized scattered light, because incident light beams entering rough surfaces are directed into random orientations and produce the unpolarized scattered light. The degree of the surface roughness is estimated by assuming that the rough surface consists of periodically arranged spherical segments.