The effect of carbon on the valence band offset of compressively strained Sl↓(1-x-y)Ge↓(x)C↓(y)/(l00) Si heterojunctions

摘要

Capacitance-voltage measurements have been used to study the effect of carbon on the valence band offset of compressively strained Si↓(1-x-y)Ge↓(x)C↓(y)/(100) Si heterojunctions grown by rapid thermal chemical vapor deposition with substitutional C levels from 0 to 2.5. The Valence band offset between Si↓(1-x-y)Ge↓(x)C↓(y) and unstrained (100) Si decreases at a rate of 20-26 meV per C. Our work indicates that the change in the bandgap of Si↓(1-x-y)Ge↓(x)C↓(y) as carbon is added is entirely accommmodated in the valence band. # 1997 American Institute of Physics. S0003-6951 (97)00512-3