Deep acceptorlike recombination centers in bulk liquid encapsulated Czochralski GaP, studied with optically detected magnetic resonance

摘要

The optically detected magnetic resonance technique is applied to determine the nature of broad, featureless emission bands observed in the nearhyphen;infrared region in bulk GaP crystals grown by the liquid encapsulated Czochralski method. A broad emission band with maximum at ape;8000 Aring; (ape;1.55 eV) was consistently observed in undoped and donorhyphen;doped (S, Te, Se, Ge) crystals, and is shown to be due to donorhyphen;acceptor pair (DAP) recombination. The analysis of the optically detected magnetic resonance experiments indicates that shallow donors and deep acceptors are active in the 8000hyphen;Aring; recombination. The identity of the ape;0.7hyphen;eV deep acceptor center active in this DAP transition could not be determined from the experimental results, but a single acceptor complex consisting of a Ga vacancy and two adjacent donors is proposed as a tentative model.