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Growth by molecular beam epitaxy and characterization of CaF{sub}2:Pr{sup}3+ planar waveguides

机译:Growth by molecular beam epitaxy and characterization of CaF{sub}2:Pr{sup}3+ planar waveguides

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摘要

Pr{sup}(3+) -doped CaF{sub}2 layers on CaF{sub}2(111) substrates were grown by molecular beam epitaxy. The effect of Pr concentration on spectroscopic properties and waveguide characteristics of the thin films was investigated and the existence of clustering of the tripositive praseodyme ions in CaF{sub}2 was put forward to explain certain optical results. Photoluminescence spectra were obtained in the wavelength range 590 - 650 nm for 3{sup left}P{sub}0→3{sup left}F{sub}2 and 3{supleft}P{sub}0→3{sup left}H{sub}6 transitions of Pr{sup}(3+) ions, and a 3{sup left}P{sub}0 level lifetime of the order of 100μs was measured. This work demonstrates that active optical waveguides, useful for integrated optoelectronic devices, can beproduced by growing Pr-doped CaF{sub}2 epitaxial layers.

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