The composition, distribution, and chemical bonding of tungstenhyphen;implanted glassy carbon have been studied for ion doses between 3.5times;1014and 1.5times;1017ions/cm2. The implantations were performed using a metalhyphen;vapor vacuum arc ion source which for an extraction potential of 20 kV yields a mean implant energy of 60 keV. The implanted layer was examined by Rutherford backscattering spectrometry and Auger profiling spectroscopy. In addition, volume effects were assessed by measuring the step height between implanted and unimplanted regions. It has been established that the implanted tungsten is bonded in a carbidic configuration. This is in agreement with thermodynamic data which favors carbide formation rather than separate phases of metallic tungsten and graphitic carbon. For the highest dose studied, 1.5times;1017ions/cm2, the tungsten distribution was found to be nearly constant near the surface followed by a decrease at larger depths. For ion doses up to 3.6times;1016ions/cm2, the maximum tungsten distribution was found to occur at a depth 300plusmn;100 Aring; and the implanted and retained doses were found to be equal. For tungsten ion doses between 7.35times;1014and 1times;1016ions/cm2, the implanted region was found to be compacted by 300plusmn;100 Aring;. The latter is attributed to an irradiationhyphen;induced densification of glassy carbon from 1.5 to 2.1 g/cm3. This compaction effect is also found to occur upon C+(30 keV) implantation for ion doses between 3times;1016and 1.3times;1017ions/cm2. In this case the implanted layer was compacted by 400plusmn;100 Aring;. For higher tungsten doses, a steep increase in compaction of the tungsten implanted layer was observed. This is attributed to chemical and sputtering effects.
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