The damage in epitaxial CoSi2films 500 nm thick grown on Si(111) produced by roomhyphen;temperature implantation of 150 keV28Si were investigated by 2hyphen;MeV4He channeling spectrometry, doublehyphen;crystal xhyphen;ray diffractometry, and electrical resistivity measurements. The damage in the films can be categorized into two types. In lightly (heavily) damaged CoSi2the damage is in the form of pointhyphen;like (extended) defects. The resistivity of lightly damaged CoSi2films rises with the dose of implantation. Electrical defects correlate well with structural ones in lightly damaged films. The resistivity of heavily damaged films flattens off while the structural defects continue to rise with the dose, so that resistivity no longer correlates with structural defects. Upon thermal annealing, lightly damaged films can fully recover structurally and electrically, whereas heavily damaged films do so only electrically. A residual structural damage remains even after annealing at 800thinsp;deg;C for 60 min.
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