Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

摘要

Doping solely during periods when growth was suspended has been used to synthesize profiles not easily achieved by conventional doping techniques. Suspension of growth under arsenic stabilized conditions allows Ge doping to producen‐type complex profiles with reduced autocompensation. At higher temperatures, autocompensation becomes apparent. Under gallium stabilized conditions, heavily autocompensatedn‐type layers resulted, consistent with a nonunity incorporation coefficient.