Influence of the minority carriers on the transverse acoustoelectric voltage

摘要

A new expression of the transverse acoustoelectric voltage (TAV) is obtained for semiconductors including both majority and minority carriers. Numerical results are given and compared for LiNbO3/Si and LiNbO3/GaAs structures. It is shown that the influence of the minority carriers is restricted to quasihyphen;intrinsic semiconductors. The change in sign of the TAV for low conductivities and low frequencies, previously predicted for extrinsic semiconductors, is confirmed.