...
首页> 外文期刊>IEEE journal of selected topics in quantum electronics: A publication of the IEEE Lasers and Electro-optics Society >Temperature Behaviour of Pulse Repetition Frequency in Passively Mode-Locked InGaAsP/InP Laser Diode#x2014;Experimental Results and Simple Model
【24h】

Temperature Behaviour of Pulse Repetition Frequency in Passively Mode-Locked InGaAsP/InP Laser Diode#x2014;Experimental Results and Simple Model

机译:Temperature Behaviour of Pulse Repetition Frequency in Passively Mode-Locked InGaAsP/InP Laser Diode#x2014;Experimental Results and Simple Model

获取原文
获取原文并翻译 | 示例

摘要

In this paper, we report on a laser diode design that can be passively mode locked up to heat sink temperature of 75${circ}$C. The dependence of mode-locked frequency and the dependence of the tuning range of the mode-locked laser diode, on operating temperature were investigated. A simple model is presented that can be used to identify the major contributing factors toward the positive shift of mode-locked frequency with temperature. The model takes into account the change of refractive indexes with temperature, change of cavity length with temperature, effect of wavelength shift on refractive indexes, and effect of injected carriers on effective index. While lacking absolute accuracy due to the simplicity of the model, the calculated results demonstrate similar trend to the measured values. The model identifies waveguide dispersion and carrier-induced refractive index change as the major contributing factors to the positive shift of mode-locked frequency with temperature.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号