Total dose effect on soft error rate for dynamic metal‐oxide‐semiconductor memory cells

摘要

A simple model for the soft error rate for dynamic metal‐oxide‐semiconductor random access memories due to normal galactic radiation was devised and then used to calculate the rate of decrease of the single‐event‐upset rate with total radiation dose. The computation shows that the decrease in the soft error rate is less than 10 per day if the shielding is 0.5 g/cm2and the spacecraft is in a geosynchronous orbit. The decrease is considerably less in a polar orbiting device.