A comparison between calculation procedures for photoelectrical method of determination of charge distribution in metalhyphen;oxidehyphen;semiconductor dielectric layers

摘要

Photoelectrical methods are widely used to determine charge distribution in the oxide layer of metalhyphen;oxidehyphen;semiconductor structures. Implementation of techniques proposed so far requires complicated numerical calculations. In this work, a new, simple analytical method of charge distribution extraction from experimental photoelectrical currenthyphen;voltage curves is presented. The method is based on the relationships derived from the other photoelectrical techniques and, therefore, is consistent with them. An example confirming the validity of the proposed method is also shown.