Role of TaON interface for Cu_(x)O resistive switching memory based on a combined model

摘要

For the embedded application of the resistive switching memory using Cu_(x)O films, the controllable switching polarity and optimized low resistance state was investigated. Stable bipolar switching behavior was demonstrated for the TaN/Cu_(x)O/Cu device. TaON was observed at the anode interface by x-ray photoelectron spectroscopy and transmission electron microscopy, which is believed to play a key role in the resistance transition. The physics behind this phenomenon of reactive top-electrode is revealed. A filament/charges trapped combined model is proposed to clarify the electrical characteristics of the top-electrode/oxide reactions. This observation presents a unique opportunity to elucidate a universal mechanism for the resistive switching of transitional metal oxides.