A generalized thermal model for stripehyphen;geometry injection lasers

摘要

We present a generalized thermal model based on a finitehyphen;element code for estimating the temperature rise, associated thermal resistance, and cw optical power in a stripehyphen;geometry doublehyphen;heterostructure laser. In particular, we report the first thermal analysis of a zinchyphen;diffused, oxidehyphen;insulated AlGaAs laser structure below and above threshold taking into account the lateral current spreading, the temperature dependence of the threshold current, and external differential quantum efficiency. The results show that the thermal resistance of the device increases approximately by 18percnt; with the effects of zinc diffusion and oxide insulation.