Effect of pre-annealing on physical and electrical properties of SrBi{sub}2Ta{sub}2O{sub}9 thin films prepared by chemical solution deposition

摘要

SrBi{sub}2Ta{sub}2O{sub}9 (SBT) thin films with Bi layered-perovskite structure were formed by chemical solution deposition method. The effects of pre-annealing on physical and electrical properties of SBT thin films were investigated by employing rapid thermal annealing (RTA) and furnace annealing. SBT thin films pre-annealed by furnace after each spin-coating exhibited better surface morphology and electrical properties than those pre-annealed by RTA. The crystallization mechanisms of SBT thin films with pre-annealing by RTA and furnace were examined by X-ray diffraction (XRD) analysis and scanning electron micrograph (SEM). Finally, the optimum condition of furnace pre-annealing (700℃for 30 min) was found to give remanent polarization (2Pr) of about 20{sub}μVC/cm{sup}2, leakage current density of less than 10{sup}(-7) A/cm{sup}2, and breakdown voltage of 15 V.