Computer simulation and analytical models for the timehyphen;ofhyphen;flight experiment in amorphous silicon thin films

摘要

Computer simulation of the timehyphen;ofhyphen;flight experiment in amorphous siliconphyphen;ihyphen;ndiodes is used to predict and interpret the terminal response following a transient strongly absorbed optical excitation. Numerical solutions and the associated physical interpretation illuminate the transport physics and the accuracy of the methods used to extract transport parameters. The interaction between free carriers and gap states is discussed on the basis of numerical results on the internal variable profiles. The influence on the transient photocurrent of band mobilities, transient trapping, and transient emission is investigated. Based on the interpretation of the computer solutions, certain analytical approximations are derived that allow extraction of parameters such as band mobilities, transition rates, and density of tail states.