Determination of intervalley scattering times in GaAs from electroluminescence spectroscopy of single barrier tunneling devices

摘要

We report the results of hot electron electr01uminescence (EL) experiments carried out on p-i-n GaAs/AlGaAs single barrier tunneling structures. The EL spectra show peaks arising from recombination of both ballistic and intervalley-scattered electrons with neutral acceptors in the p-type collector region. From the relative intensities of these EL features we have obtained direct spectroscopic measurements of the F-L and F-X intervalley scattering times for high energy ballistic electrons in GaAs. #1997 American Institute of Physics. S0003-6951(97)03705-4