GaAs layers with thicknesses from 1 to 8 mgr;m were grown by molecular‐beam epitaxy onto Si(100) substrates. These epitaxial layers were lightly doped with Si (NDbartil;2×1016cm−3). The determination of accurate numbers for the carrier concentrations and mobilities in the GaAs is complicated by the low doping and the dimensions of the films. However, a new approach in IR spectroscopy that combines a conventional reflectance measurement from 50 to 500 cm−1with a transmittance measurement in the very far‐infrared range from 12 to 62 cm−1is demonstrated to provide precise information on both carrier concentrations and mobilities. A comparison of the results obtained at room temperature from IR and Hall measurements reveals that the nondestructive IR technique is an easy to perform and excellent characterization tool for the Ga As layers.
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机译：通过分子&连字符束外延在Si（100）衬底上生长厚度为1-8 &mgr;m的GaAs层。这些外延层轻掺杂了Si（ND&bartil;2×1016cm−3）。由于低掺杂和薄膜尺寸，GaAs中载流子浓度和迁移率的准确数字的确定变得复杂。然而，红外光谱学中的一种新方法将50至500 cm−1的常规反射率测量与12至62 cm−1的极远红外线范围内的透射率测量相结合，以提供有关载流子浓度和迁移率的精确信息。在室温下通过红外和霍尔测量获得的结果的比较表明，无损红外技术是一种易于执行且出色的 Ga As 层表征工具。
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