Epitaxial growth of InN on (0001) sapphire with an AlN buffer layer was studied by migration-enhanced epitaxy, which is composed of an alternative supply of pure In atoms and N_(2) plasma. A series of samples were prepared with different substrate temperatures ranging from 360 to 590℃. As-grown films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction, atomic-force microscopy (AFM), and Hall measurements. Both XRD θ-2θ and ω scans show that the full width at half maximum of the (0002) peak nearly continuously decrease with increasing growth temperature, while InN grown at 590℃ shows the poorest surface morphology from AFM. It is suggested that three-dimensional characterization is necessary for an accurate evaluation of the quality of the InN epilayer. Hall mobility as high as 542 cm~(2)/V s was achieved on film grown at ～500℃ with an electron concentration of 3×10~(18) cm~(-3) at room temperature. These results argue against the common view that nitrogen vacancies are responsible for the high background n-type conductivity of InN. To illuminate the relationship between Hall mobility and carrier concentration, the electrical properties of all InN films grown recently were summarized.
展开▼
