Thermal degradation of indiumhyphen;tinhyphen;oxide/phyphen;silicon solar cells

摘要

Thermal degradation of indiumhyphen;tinhyphen;oxide (ITO)/phyphen;silicon solar cells has been investigated for cells fabricated on both single and polycrystalline silicon. The primary thermal degradation mechanisms was found to be the growth of SiO2at the ITO/silicon interface resulting from oxygen diffusion through the ITO and not decomposition of the ITO. The degradation rate appears to be limited by surface reaction controlled oxidation since this rate is independent of ITO thickness. The polycrystalline cells were observed to degrade somewhat faster than the singlehyphen;crystalline cells. The projected cell life at 50thinsp;deg;C due to thermal failure mechanisms exceeds 105years for both singlehyphen;crystal and polycrystalline cells.