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Hypersonic shock waves and hybridization of a-C : H thin films

机译:高超音速冲击波和a-c:H薄膜的杂化

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A distributed electron cyclotron resonance plasma reactor powered by a microwave generator operating at 2.45 GHz was used to deposit a-C:H films at room temperature on rf biased 100 Si substrates. Modifying substrate bias, substrate current density and composition of the precursor gas enabled the average deposited energy density to be varied. The physical properties of a-C:H were investigated using atomic force microscopy (AFM), x-ray photoelectron spectroscopy, and electron energy loss spectroscopy (EELS). The experimental results were correlated with the predictions of the binary collision theory. The influence of the deposited energy density on the nucleation and growth processes was investigated using both pure C2H2 and C2H2 mixed with Ar. The sp(3) nucleation process is shown to be stimulated by high energy density cascades generated by (C2H2)(+) and Ar+ ions. For the pure acetylene plasma, the AFM topography displays a random network of circular, crater-like objects close to 1 mum in diameter. These objects are associated with plastic flow of a-C:H and are attributed to the transversal hypersonic shock waves generated by overlapping binary collision cascades. EELS analysis shows that an increasing ion current density applied under constant substrate bias leads to an increased sp(3) hybridized carbon fraction. The effect is attributed to interference between the shock waves triggered by individual ions and the corresponding high pressure transients. The probability P-i of a dynamic overlap of order i between shock waves is estimated under the assumption that in order to modify the quantum state and bonding type, the overlap must occur during the wave propagation time tau. The observed evolution of the sp(3) hybridized fraction is consistent with theoretical predictions for i = 2 and a propagation time tau approximate to 1 ps, indicating that shock waves are generated during the cascade's lifetime. Analysis of the AFM images shows that once the shock wave comes to rest, the subsequent nucleation of the sp(3) hybridized component is controlled by the tensile stress-mediated nucleation process. (C) 2003 American Institute of Physics. References: 26
机译:由工作频率为2.45 GHz的微波发生器驱动的分布式电子回旋共振等离子体反应器用于在室温下将a-C:H薄膜沉积在射频偏置[100]Si衬底上。通过改变衬底偏置、衬底电流密度和前驱体气体的组成,可以改变平均沉积能量密度。采用原子力显微镜(AFM)、X射线光电子能谱和电子能量损失谱(EELS)研究了a-C:H的物理性质.实验结果与二元碰撞理论的预测结果相吻合。以纯C2H2和C2H2与Ar混合为研究对象,研究了沉积能量密度对成核和生长过程的影响。sp(3) 成核过程被证明是由 (C2H2)(+) 和 Ar+ 离子产生的高能量密度级联刺激的。对于纯乙炔等离子体,AFM形貌显示了一个直径接近1 mum的圆形陨石坑状物体的随机网络。这些物体与a-C:H的塑性流动有关,并归因于重叠的双星碰撞级联产生的横向高超音速冲击波。EELS分析表明,在恒定衬底偏置下,施加的离子电流密度增加会导致sp(3)杂化碳分数增加。这种效应归因于单个离子触发的冲击波与相应的高压瞬变之间的干扰。在以下假设下估计了冲击波之间动态重叠的概率 p-i,为了改变量子态和键合类型,重叠必须发生在波传播时间 tau 期间。观察到的sp(3)杂化部分的演变与理论预测一致,即i = 2和传播时间tau接近1 ps,表明在级联的生命周期内会产生冲击波。对AFM图像的分析表明,一旦冲击波停止,sp(3)杂化组分的后续成核由拉伸应力介导的成核过程控制。(C) 2003年美国物理学会。[参考文献: 26]

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