Electronic transport investigation of arsenichyphen;implanted silicon. II. Annealing kinetics of defects

摘要

A study of the effects of the annealing temperature and time on arsenichyphen;implanted silicon films is reported. ac and dc Hallhyphen;effect measurements as a function of temperature and frequency have been employed to characterize arsenichyphen;implanted silicon films. The method of spreading resistance has also been used, allowing measurement of the resistance of the implantation damage layer as a function of depth. These techniques allow one to probe the annihilation processes of damage layer defects as a function of annealing conditions (i.e., temperature and time). The activation energy of the recovery process of the ionic implantation damage, found to be about 0.6 eV, is attributed to a local reconstruction of the implanted layer.