Fabrication of buriedhyphen;heterostructure diode lasers usinginsituMg diffusion

摘要

Aninsitudiffusion technique is developed to simplify the diodehyphen;laser fabrication process. In this technique Mg is diffused into doublehyphen;heterostructure wafers during their liquidhyphen;phasehyphen;epitaxial growth process through aninsituformed diffusion mask, which makes separate maskhyphen;formation and diffusion processes unnecessary. Buriedhyphen;heterostructure lasers with low threshold and high efficiency are fabricated utilizing this simplified process.