Simulations of the transient photoconductivity inahyphen;SiO2using a multiplehyphen;trap model

摘要

Computer simulations for transient photocurrent produced by a uniform excitation in a system with an exponential distribution of traps have been performed, and the results have been compared with recent experimental data of the transient photoconductivity in SiO2and found to show excellent agreement. The temperature dependence of the parameters of our multiplehyphen;trap model are discussed with reference to the experimental results, providing further support for the application of this model toahyphen;SiO2.