The characteristics of an In0.5Ga0.5P and In0.5Ga0.5P/GaAs heterojunction grown on a (100) GaAs substrate by liquid‐phase epitaxy

摘要

The growth of a high‐quality In0.5Ga0.5P/GaAs heterostructure on a (100) GaAs substrate by liquid‐phase epitaxy is demonstrated. This has been achieved by controlling the vaporizing time of phosphorus after the melt saturation procedure. The photoluminescence spectra of In0.5Ga0.5P/GaAs heteroepitaxial layers show that the major residual acceptor impurity is either carbon or silicon. The measured values of the conduction‐band discontinuity Dgr;Ecand the fixed interface charge density sgr;ifor a In0.5Ga0.5P/GaAs heterostructure are 110 meV and 1×1011cm−2, respectively. Only one electron trap with a thermal activation energy ofEa=0.32 eV, which is thought to be related to the anion vacancy, is found in Sn‐doped In0.5Ga0.5P (n∼1×1017cm−3) layers.