Effect of illumination on mobilities in semihyphen;insulating GaAs

摘要

The minorityhyphen;carrier mobility mgr;nand the Hall mobility mgr;Hof Crhyphen;doped semihyphen;insulatingphyphen;type GaAs crystals were investigated as a function of the wavelength lgr; of illumination in the region of 400ndash;900 nm, at room temperature. The mobilities were determined by combining photomagnetoresistance and photohyphen;Hall measurements. All the mobility (as a function of wavelenth) curves had the same characteristic form with a minimum at 700 nm. This form is explained by using the variation of the light penetration depth with the wavelength and the existence of two kinds of holes.