The instability of the electrical properties of semihyphen;insulating GaAs materials has been investigated. The presence of chemical contaminants on the surface of the finished wafers is responsible. Simulated thermal conversion using intentional carbonhyphen;ion implantation indicates larger concentrations for the possible contaminants on the surface than that in the bulk. The contribution to instability due to preferential gettering of imperfections from bulk by the implant and annealing process was eliminated using intentional Arhyphen;ion implantation. For the samples which exhibited a change in electrical conduction type, a linear relationship between the thickness of the typehyphen;converted surface layer and the square root of heat treatment time was observed. It is proposed that the causes for the instability are governed by conventional diffusion mechanisms with multiple electrically active species involved. A positive correlation was also observed between thermally induced electrical instability in ionhyphen;implanted material and a reduction in activation, peak carrier density, and Hall mobility.
展开▼
