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Kerr‐effect enhancement and improvement of readout characteristics in MnBi film memory

机译:Kerr连字符;MnBi薄膜存储器中读出特性的增强和改进

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摘要

Enhancement of the Kerr effect was studied to assess its effectiveness in improving readout characteristics of a magneto‐optical memory utilizing MnBi films. SiO was used to enhance the Kerr effect by coating it on magnetic films. The coating results in a change, not only in the Kerr rotation but also in the ellipticity and reflectivity of the films. Changes of these quantities were calculated as a function of the SiO thickness, using optical constants of both MnBi and SiO, i.e., the refractive indicesn2andn3of SiO and MnBi, respectively, and the off‐diagonal element egr;′ of the dielectric tensor of MnBi. The optical constants determined in this work weren2=(2.0±0.02)−(0.02±0.02)i,n3=3.1−3.5i, and egr;′ = −1.2−0.4iat a wavelength of 6328 Å. The Kerr rotation and the reflectivity were measured for various SiO thicknesses and were compared with the results of theoretical calculations. Experimental and theoretical results agreed well with each other. The readout signal‐to‐noise ratio, which is a function of the Kerr rotation, ellipticity, and reflectivity, is expected to be improved by a factor of more than 2, when SiO is coated on the MnBi film surface.
机译:研究了Kerr效应的增强,以评估其在利用MnBi薄膜改善磁和连字符光学存储器读出特性方面的有效性。SiO用于通过将其涂覆在磁性薄膜上来增强Kerr效应。涂层不仅在克尔旋转方面,而且在薄膜的椭圆度和反射率方面都发生了变化。使用MnBi和SiO的光学常数,即SiO和MnBi的折射率sn2andn3,以及MnBi介电张量的off‐对角线元素&egr;′,计算这些量的变化作为SiO厚度的函数。本文确定的光学常数为2=(2.0±0.02)−(0.02±0.02)i,n3=3.1−3.5i和&egr;′=−1.2−0.4i,波长为6328 Å。测量了不同SiO厚度的Kerr旋转和反射率,并与理论计算结果进行了比较。实验结果和理论结果吻合良好。当SiO涂覆在MnBi薄膜表面时,读出信号&连字符与&连字符的噪声比(Kerr旋转、椭圆度和反射率的函数)预计将提高2倍以上。

著录项

  • 来源
    《journal of applied physics》 |1974年第8期|3643-3648|共页
  • 作者

    K. Egashira; T. Yamada;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
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