Photoluminescence in strained InGaAshyphen;GaAs heterostructures

摘要

Photoluminescence in strained InxGa1minus;xAshyphen;GaAs single heterostructures, grown by molecularhyphen;beam epitaxy, is studied, and the critical layer thickness is determined for a range of In mole fractions. The critical thicknesses are compared with similar values measured on the same layers by doublehyphen;crystal xhyphen;ray diffraction. Both techniques give essentially the same results. The photoluminescence line shapes are discussed for layer thicknesses below and above the critical thickness.