Migration enhanced epitaxy, in which group III and group V elements are deposited onto the substrate alternately under ultrahigh vacuum, has been employed to reduce AlGaAs growth temperature. By optimizing growth conditions of AlGaAs, molecularhyphen;beam intensities, and substrate temperatures between 600 and 250thinsp;deg;C, an AlGaAs/GaAs singlehyphen;quantumhyphen;well laser diode has been fabricated successfully at very low temperature of 350thinsp;deg;C for the first time. A broad area laser diode emitting at 780 nm shows the threshold current density of 2.5 kA/cm2at room temperature under the pulsed operation.
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