Absorption peaks at 2663 and 2692 cmminus;1observed in neutronhyphen;transmutationhyphen;doped silicon

摘要

Two absorption peaks at 2663 and 2692 cmminus;1are reported which were observed by Fourier transform infrared at a temperature below 77 K in all fasthyphen;neutronhyphen;irradiated samples investigated. These peaks are very weak and obscured by the nearby divacancy 3.61hyphen;mgr;m band in most cases. However, they are obviously enhanced by the presence of impurity hydrogen. They anneal out at about 200thinsp;deg;C. It is proposed that a single defect center, which may be the dihyphen;interstitial, gives rise to the two peaks.