Growth and Properties of Semiconductor Nanowires by Selective-Area Metalorganic Vapor Phase Epitaxy

摘要

We describe our recent results on the formation of III-V semiconductor nanowires and related nanostructures utilizing selective-area metal organic vapor phase epitaxial (SA-MOVPE) growth. Array of vertically aligned nanowires are grown on partially masked GaAs and InP substrate along the 111B or 111A directions, respectively. The alignment and size of the nanowires are controlled by the mask patterning as well as growth conditions. Nanowires containing heterostructures in their radial direction have also been realized by controlling the growth mode during SA-MOVPE. Their optical and transport properties are also investigated and described.