The electromigration velocities of a liquid gallium inclusion in singlehyphen;crystal silicon follow an Arrhenius relationship with temperature. The activation energy is 14.5 kcal/mol and the preexponential factor is 2.1times;10minus;5cm3/C. Electromigration velocities are linearly proportional to the applied electric current density. Ga inclusions electromigrate towards the cathode at all temperatures. The electronhyphen;atom momentum exhange is the principal electromigration driving force. Peltierhyphen;induced temperaturehyphen;gradient zone melting contributes less than 1percnt; of the observed electromigration velocity. Current funneling into the galliumhyphen;doped redepositedhyphen;silicon train behind the electromigrating inclusion can increase the current density passing through the inclusion by up to a factor of 10. At temperatures below 500thinsp;deg;C, current diversion by rectification by thephyphen;I junction between the doped inclusion trail and the parent silicon crystal inhibits galliumhyphen;inclusion electromigration.
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