Annhyphen;In0.53Ga0.47As/nhyphen;InP rectifier

摘要

We report the currenthyphen;voltage (Ihyphen;V), capacitancehyphen;voltage (Chyphen;V), and photoresponse characteristics ofnhyphen;In0.53Ga0.47As/nhyphen;InP heterobarrier diodes. We find the conductionhyphen;band barrier is Dgr;egr;c= 0.22plusmn;0.02 eV. We find thermionic emission is the dominant mechanism for carrier transport across the heterobarrier. Also, to the level of sensitivity of our measurement techniques, no interface states have been detected.