One of the effects of heavy doping is that the dielectric constant varies with impurity density, and thus with position. The general form of Poisson’s equation is solved numerically for a Gaussianp‐njunction using a model for egr;(N) which is consistent with the experimental data reported by Castner. The results indicate that the charge density near the surface where the doping is large is a strong function of egr;(N), resulting in a large deviation from the constant egr; case. This result may be important when capacitive measurement techniques are used to find device parameters in heavily doped semiconductors. The result also indicates a need to consider egr;(N) in the theory of the ionization of impurity atoms.
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