Single-electron transistors and memory cells with Au colloidal islands

摘要

In this study, single-electron transistors and memory cells with Au colloidal islands linked by C-60 derivatives have been fabricated by hybridization of top-down advanced electron-beam lithography and bottom-up nanophased-material synthesis techniques. Low-temperature transport measurements exhibit clear Coulomb-blockade-type current-voltage characteristics and hysteretic-type gate-modulated current. The hysteresis is attributed to the presence of electrically isolated charge-storage islands. With the guidance provided by Monte Carlo simulation, we propose a circuit model and give an estimate of the sample parameters. (C) 2002 American Institute of Physics. References: 14