An electrical contact material consisting of an initially metastable solid solution of Cu in Mo is shown to provide improved adhesion to CuInSe2when the Cu content exceeds ∼30 at. . During physical‐vapor deposition of CuInSe2on these Cu‐Mo solutions at elevated temperatures, phase separation occurs and Cu is released into the CuInSe2layer. The Cu release begins at approximately 450 °C and increases in rate with increasing temperature. The release of Cu into the film along with consequent changes in the back contact are responsible for the improved adhesion. Similar adhesion improvements were obtained using annealed Cu‐Mo layers in which phase separation occurred before CuInSe2growth. Photovoltaic devices based on CuInSe2on Cu0.3Mo0.7back contacts showed improved performance and uniformity.
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机译：由初始亚稳态固溶体组成的电接触材料表明，当 Cu 含量超过 ∼30 at 时，可提高对 CuInSe2 的附着力。%。在高温下，在这些 Cu‐Mo 溶液上对 CuInSe2 进行物理气相沉积时，发生相分离并将 Cu 释放到 CuInSe2 层中。Cu释放从大约450°C开始，并随着温度的升高而增加。Cu 释放到薄膜中以及随之而来的背接触变化是改善附着力的原因。使用退火的Cu‐Mo层获得了类似的附着力改善，其中相分离发生在CuInSe2生长之前。基于CuInSe2on Cu0.3Mo0.7背接触的光伏器件表现出更好的性能和均匀性。
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