The influence of underlying metals on the hydrogen evolution from plasmahyphen;deposited silicon nitride films

摘要

The influence of underlying metals on hydrogen evolution from plasmahyphen;enhanced chemical vapor deposited silicon nitride (Phyphen;SiN) films was investigated. Titanium (Ti), tungsten (W), and tungsten silicide (WSix:x=2.3) cap layers were deposited onto purehyphen;Al, Alhyphen;1percnt;Si, Alhyphen;0.5percnt;Cu and Alhyphen;1percnt;Sihyphen;0.5percnt;Cu films on oxidized silicon wafers. The bilayers and Alhyphen;alloys were covered withPhyphen;SiN films and heated. It was found that the hydrogen evolution rates for thePhyphen;SiN films were influenced by the underlying bilayers as well as Alhyphen;alloys. Copper (Cu) addition to underlying Al films raised the hydrogen evolution rate peak temperature for the coverPhyphen;SiN film, due to the suppression of coverPhyphen;SiN film blistering and cracking as a result of Alhyphen;Cu hardening. Titanium thinhyphen;film capping on the Alhyphen;alloy also raised the hydrogen evolution rate peak temperature for thePhyphen;SiN film, as results of Ti adhesive layer and thermally stable intermetallic compound formation, TiAl3.