B+‐implanted Si layers preamorphized with 100‐keV Ge+implantation have been evaluated using Rutherford backscattering spectrometry and the van der Pauw technique. We suggest that the lower structural recovery, 98 of Si occupies substitutional sites, arises from the difference in tetrahedral covalent radii among Si, Ge, and B atoms. Electrical properties of dual Ge+/B+‐implanted layers are discussed by a two‐carrier model consisting of both electron and hole. The conversion temperature from thep‐ to then‐type varies from ∼15 to ∼ 125 °C with increasing electrical activation of the boron acceptor. The activation saturates at annealing temperatures above 800 °C. This restriction is due to the presence of the level and/or the defect induced in the preamorphization process.
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机译：使用 Rutherford 背散射光谱法和 van der Pauw 技术评估了用 100‐keV Ge+ 注入预定型的 B+‐注入 Si 层。我们认为，Si的较低结构回收率（98%）占据取代位点，源于Si，Ge和B原子之间四面体共价半径的差异。通过由电子和空穴组成的双连字符载流子模型讨论了双Ge+/B+&连字符注入层的电学性质。从p&连字符到then-hyphen;类型的转换温度从∼15°C到∼125°C不等，硼受体的电活化增加。活化在退火温度高于800°C时饱和。 这种限制是由于预定型化过程中诱导的水平和/或缺陷的存在。
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