Lattice excitations during laser annealing of semiconductors

摘要

During laser annealing of a semiconductor, lattice vibrations of the material are excited. It is shown in this paper that these excitations occur in a restricted range of the vibrational spectrum. The excitation number for the spectrum is derived. It is demonstrated that the effective temperature for each mode can be defined and that the temperature varies over the spectrum from its undisturbed equilibrium valueTLto a value as high asT, the temperature of the laserhyphen;induced electronhyphen;hole plasma.