The radiationhyphen;induced defect centers in a lowhyphen;loss Corning germaniumhyphen;doped optical fiber have been studied. In addition to siliconEprime; centers, four germaniumhyphen;related centers, corresponding to electrons trapped at the site of oxygen vacancies ins p3orbitals of germanium ions with zero to three nexthyphen;nearesthyphen;neighbor germaniums, were observed. A model which assumes Gaussian distributions in the excitedhyphen;state energyhyphen;level splittings has been successfully used to computer simulate the ESR spectrum of the irradiated fiber.
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