Experimental identification of the energy level of substitutional manganese in silicon

摘要

A combination of deep level transient spectroscopy (DLTS) and electron spin resonance (ESR) measurements was used to determine the energy level of substitutional manganese in silicon. Samples ofphyphen;type silicon were subjected to a copperhyphen;manganese codiffusion. Successfully prepared samples show the typical ESR signal of substitutional manganese with a single positive charge. The Hamiltonian parametersg=2.029 andA=minus;62.7times;10minus;4cmminus;1are different from those for negatively charged interstitial manganese. The DLTS measurements reveal an energy level ofM1=0.39 eV above the valencehyphen;band edge for the substitutional manganese. Because of the codiffusion of Cu also the previously reported levelsC1=0.098 eV,C2=0.22 eV, andC3=0.41 eV were found. The combination of ESR and DLTS results allowed a conclusive identification of the defect levelM1and provided no evidence for ordinary amphoteric or negativeUbehavior in the lower half of the band gap. Furthermore, isothermal and isochronal annealing experiments were performed which support the conclusion that the defect levelM1orginates from substitutional manganese inphyphen;type silicon.