Computer simulation of reflection of P ions from Si(100) crystalline targets in grazing incidence ion implantation

摘要

Reflection of 50hyphen;keV P ions from Si(100) crystalline targets has been studied using the binary collision cascade programmarlowe. Implantation profiles, damage profiles, reflection coefficients, energy, and angular distributions of reflected particles have been calculated as a function of incident angles. The calculated data reveal a strong dependence of the implantation and reflection feature on the incident angle, particularly at grazing incidence conditions. An enhanced reflection is also found to occur at a critical angle which can be described by the surface channeling theory.