Bandhyphen;gap narrowing in highly dopednhyphen; andphyphen;type GaAs studied by photoluminescence spectroscopy

摘要

Bandhyphen;gap narrowing of GaAs as a function of doping concentration has been measured using photoluminescence spectroscopy on samples grown by molecular beam epitaxy. Bothnhyphen; (Si) andphyphen; (Be) doped samples with concentrations varying from 3times;1017to 3times;1018cmminus;3have been measured. The experimental results obtained from a linehyphen;shape analysis of the spectra taking tailing effects into account are in good agreement with recent theoretical calculations. A simple expression for the bandhyphen;gap narrowing as a function of concentration for bothnhyphen;andphyphen;doped GaAs is given.