The influence of hydrogen plasma treatment and proton implantation on the electrical properties of InAs

摘要

The effects produced in InAs by hydrogen plasma treatment and proton implantation are discussed. It is shown that both treatments can produce ann‐type layer at the surface ofp‐InAs. For the hydrogen plasma treatment the effect is explained by hydrogen donors complexing with the Be and Zn acceptors and rendering them electrically inactive, thus leaving the residual donors uncompensated. In proton implanted samples thep‐nconversion is due to a creation of donor‐type lattice defects.