We present a new and efficient approach for extracting on-chip mutual inductances of VLSI interconnects by applying approximation formulae. The equations are based on the assumption of filaments or bars of finite width and zero thickness and arc derived through Taylor's expansion of the exact formula for mutual inductance between filaments. Despite the assumption of uniform current density in each of the bars, the model is sufficiently accurate for the interconnections of current and future LSIs because the skin and proximity effects do not affect most wires. Expression of the equations in polynomial form provides a balance between accuracy and computational complexity. These equations are mapped according to the geometric structures for which they are most suitable in minimizing the runtime of inductance calculation while retaining the required accuracy. Within geometrical constraints, the wires are of arbitrary specification. Results of a comprehensive evaluation based on the ITRS-specified global wiring structure for 2003 shows that the inductance values were extracted by using the proposed approach, and they were within several percent of the values obtained by using commercial three-dimensional (3-D) field solvers. The efficiency of the proposed approach is also demonstrated by extraction from a real layout design that has 300-k interconnecting segments.
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