The influence of the structural disorder on the transport properties of Co0.50Ti0.50 alloy films in a temperature range of 4.2-300 K has been investigated without and with a magnetic field of 0.5 T. The absence of translational invariance in a disordered state leads to an increase in the resistivity and causes a change from the positive to negative temperature coefficient of resistance. This fact is explained by the partial localization of electronic states near the Fermi level. It was established that a partial structural disordering enhances the role of the electron-phonon-vibrating impurity scattering in the transport properties and also makes the spin-diffusive scattering rather noticeable. The appearance of a low-temperature resistivity minimum for the disordered Co0.50Ti0.50 alloy film arises from the quantum corrections to the electron-electron interactions in the presence of weak localization. (C) 2001 American Institute of Physics. References: 10
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