Minorityhyphen;electron mobility inphyphen;type GaAs

摘要

The mobility of photoinduced minority electrons in molecularhyphen;beam epitaxially grownphyphen;GaAs has been measured directly by the Hall method. The electron mobility in a 1times;1017cmminus;3Behyphen;doped sample was about 3500 cm2/Vthinsp;s at room temperature. Temperature dependence of minority electron mobility is clearly different from that of majorityhyphen;hole mobility in the same sample. This result indicates the difference in dominant scattering mechanisms for electrons and holes inphyphen;type GaAs.