Titanium and carbon coimplantation into sintered agr;‐SiC and hot‐pressed Si3N4

摘要

Sintered agr;‐SiC and hot‐pressed Si3N4were coimplanted with 175 keV Ti+and 46 keV C+at doses of 1×1017cm−2. Energies of Ti+and C+were such that the depth distributions match closely. The samples were annealed at 1200 °C for 2 h in flowing Ar. The samples were characterized by Rutherford backscattering and cross‐section transmission electron microscopy. The distribution of Ti in agr;‐SiC remained unaltered after the anneal whereas significant redistribution occurred in Si3N4. Cross‐section transmission electron microscopy revealed the formation of TiC precipitates in the recrystallized surface layer of SiC. Although some precipitates were found to be present in the recrystallized surface layer of Si3N4, the diffraction analysis revealed that these are not TiC.